GT30J341,Q

GT30J341,Q
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Part Number GT30J341,Q
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - IGBTs - Single
Description IGBT TRANS 600V 30A TO3PN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GT30J341,Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GT30J341,Q Specifications

Part Number:GT30J341,Q
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):59 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
Power - Max:230 W
Switching Energy:800µJ (on), 600µJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:80ns/280ns
Test Condition:300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):50 ns
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P(N)

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In Stock 34997 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.57550$2.5755

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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