For Reference Only
| Part Number | GT30J121(Q) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - IGBTs - Single |
| Description | IGBT 600V 30A 170W TO3PN |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | GT30J121(Q) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 24 - Dec 28 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | GT30J121(Q) |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 30 A |
| Current - Collector Pulsed (Icm): | 60 A |
| Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 30A |
| Power - Max: | 170 W |
| Switching Energy: | 1mJ (on), 800µJ (off) |
| Input Type: | Standard |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | 90ns/300ns |
| Test Condition: | 300V, 30A, 24Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P(N) |
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| In Stock | 33134 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $2.90960 | $2.9096 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
