2SD1221-Y(Q)

2SD1221-Y(Q)
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Part Number 2SD1221-Y(Q)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS NPN 60V 3A PW-MOLD
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2SD1221-Y(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Oct 31 - Nov 04 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2SD1221-Y(Q) Specifications

Part Number:2SD1221-Y(Q)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Obsolete
Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1V @ 300mA, 3A
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
Power - Max:1 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:PW-MOLD

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In Stock 60369 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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