For Reference Only
| Part Number | 2SA965-O(TE6,F,M) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Single |
| Description | TRANS PNP 120V 0.8A TO92MOD |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2SA965-O(TE6,F,M) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 17 - Nov 21 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | 2SA965-O(TE6,F,M) |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 800 mA |
| Voltage - Collector Emitter Breakdown (Max): | 120 V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
| Power - Max: | 900 mW |
| Frequency - Transition: | 120MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package: | TO-92MOD |
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| In Stock | 89974 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.00000 | $0 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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