2SA1930(Q,M)

2SA1930(Q,M)
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Part Number 2SA1930(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS PNP 180V 2A TO220NIS
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2SA1930(Q,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 14 - Dec 18 2025(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2SA1930(Q,M) Specifications

Part Number:2SA1930(Q,M)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Obsolete
Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):180 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 1A
Current - Collector Cutoff (Max):5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
Power - Max:2 W
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220NIS

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