2SA1182-Y,LF

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Part Number	2SA1182-Y,LF
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS PNP 30V 0.5A SMINI
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	2SA1182-Y,LF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 18 - Sep 22 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

2SA1182-Y,LF Specifications

Part Number:	2SA1182-Y,LF
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 100mA, 1V
Power - Max:	150 mW
Frequency - Transition:	200MHz
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	S-Mini

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