TSM250NB06LDCR RLG

TSM250NB06LDCR RLG
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Part Number TSM250NB06LDCR RLG
Manufacturer Taiwan Semiconductor Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description DUAL N-CHANNEL POWER MOSFET 60V,
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TSM250NB06LDCR RLG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TSM250NB06LDCR RLG Specifications

Part Number:TSM250NB06LDCR RLG
Brand:Taiwan Semiconductor Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Taiwan Semiconductor Corporation
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs:25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1314pF @ 30V
Power - Max:2W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-PDFN (5x6)

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In Stock 75362 pieces - More on Order
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Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.25880$1.2588

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