TSM130NB06LCR RLG

TSM130NB06LCR RLG
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Part Number TSM130NB06LCR RLG
Manufacturer Taiwan Semiconductor Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 10A/51A 8PDFN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TSM130NB06LCR RLG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 11 - Nov 15 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TSM130NB06LCR RLG Specifications

Part Number:TSM130NB06LCR RLG
Brand:Taiwan Semiconductor Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2175 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (5x6)
Package / Case:8-PowerTDFN

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Quick Inquiry

In Stock 56058 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
2500$0.34930$873.25
5000$0.33726$1686.3

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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