TSM018NB03CR RLG

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Part Number	TSM018NB03CR RLG
Manufacturer	Taiwan Semiconductor Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 29A/194A 8PDFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TSM018NB03CR RLG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TSM018NB03CR RLG Specifications

Part Number:	TSM018NB03CR RLG
Brand:	Taiwan Semiconductor Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Taiwan Semiconductor Corporation
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 194A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.8mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	120 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7252 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta), 136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PDFN (5x6)
Package / Case:	8-PowerTDFN

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