TQM130NB06CR RLG

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Part Number	TQM130NB06CR RLG
Manufacturer	Taiwan Semiconductor Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 10A/50A 8PDFNU
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TQM130NB06CR RLG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TQM130NB06CR RLG Specifications

Part Number:	TQM130NB06CR RLG
Brand:	Taiwan Semiconductor Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Taiwan Semiconductor Corporation
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7V, 10V
Rds On (Max) @ Id, Vgs:	13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	40 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2234 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta), 83W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	8-PDFNU (5x6)
Package / Case:	8-PowerTDFN

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