1N5407GHB0G

1N5407GHB0G
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Part Number 1N5407GHB0G
Manufacturer Taiwan Semiconductor Corporation
Category Discrete SemiconductorDiodes - Rectifiers - Single
Description DIODE GEN PURP 800V 3A DO201AD
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 1N5407GHB0G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

1N5407GHB0G Specifications

Part Number:1N5407GHB0G
Brand:Taiwan Semiconductor Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:5 µA @ 800 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C

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In Stock 84992 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
5000$0.08160$408

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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