For Reference Only
| Part Number | STW18N65M5 |
| Manufacturer | STMicroelectronics |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 650V 15A TO247 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | STW18N65M5 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 02 - Jan 06 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | STW18N65M5 |
| Brand: | STMicroelectronics |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | STMicroelectronics |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 220mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 31 nC @ 10 V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1240 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-3 |
| Package / Case: | TO-247-3 |
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| In Stock | 22290 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $6.21000 | $6.21 |
| 30 | $5.06367 | $151.9101 |
| 120 | $4.64550 | $557.46 |
| 510 | $3.83039 | $1953.4989 |
| 1020 | $3.28700 | $3352.74 |
| 2520 | $3.14070 | $7914.564 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
