STGW80H65DFB-4

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Part Number	STGW80H65DFB-4
Manufacturer	STMicroelectronics
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT BIPO 650V 80A TO247
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	STGW80H65DFB-4 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

STGW80H65DFB-4 Specifications

Part Number:	STGW80H65DFB-4
Brand:	STMicroelectronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	STMicroelectronics
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	120 A
Current - Collector Pulsed (Icm):	240 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 80A
Power - Max:	469 W
Switching Energy:	2.1mJ (on), 1.5mJ (off)
Input Type:	Standard
Gate Charge:	414 nC
Td (on/off) @ 25°C:	84ns/280ns
Test Condition:	400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr):	85 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-4
Supplier Device Package:	TO-247-4

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