SCTW35N65G2V

SCTW35N65G2V
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Part Number SCTW35N65G2V
Manufacturer STMicroelectronics
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 650V 45A HIP247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SCTW35N65G2V PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SCTW35N65G2V Specifications

Part Number:SCTW35N65G2V
Brand:STMicroelectronics
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:-
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3

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In Stock 4917 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$19.57000$19.57

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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