SCTH60N120G2-7

SCTH60N120G2-7
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Part Number SCTH60N120G2-7
Manufacturer STMicroelectronics
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description PTD WBG & POWER RF
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SCTH60N120G2-7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 28 - Jan 01 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SCTH60N120G2-7 Specifications

Part Number:SCTH60N120G2-7
Brand:STMicroelectronics
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Product Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1969 pF @ 800 V
FET Feature:-
Power Dissipation (Max):390W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 3389 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$26.04525$26.04525

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