SCTH35N65G2V-7AG

SCTH35N65G2V-7AG
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Part Number SCTH35N65G2V-7AG
Manufacturer STMicroelectronics
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 650V 45A H2PAK-7
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SCTH35N65G2V-7AG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 04 - Nov 08 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SCTH35N65G2V-7AG Specifications

Part Number:SCTH35N65G2V-7AG
Brand:STMicroelectronics
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 5444 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$19.85000$19.85

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