SCTH35N65G2V-7AG

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Part Number	SCTH35N65G2V-7AG
Manufacturer	STMicroelectronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 650V 45A H2PAK-7
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SCTH35N65G2V-7AG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 29 - Dec 03 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SCTH35N65G2V-7AG Specifications

Part Number:	SCTH35N65G2V-7AG
Brand:	STMicroelectronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	STMicroelectronics
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V, 20V
Rds On (Max) @ Id, Vgs:	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	73 nC @ 20 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1370 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	208W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	H2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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