For Reference Only
Part Number | SCT50N120 |
Manufacturer | STMicroelectronics |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | SICFET N-CH 1200V 65A HIP247 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SCT50N120 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 16 - Nov 20 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SCT50N120 |
Brand: | STMicroelectronics |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | STMicroelectronics |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 69mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 122 nC @ 20 V |
Vgs (Max): | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1900 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 318W (Tc) |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | HiP247™ |
Package / Case: | TO-247-3 |
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In Stock | 2126 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $42.10000 | $42.1 |
10 | $39.09400 | $390.94 |
100 | $33.88840 | $3388.84 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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