For Reference Only
Part Number | SCT10N120 |
Manufacturer | STMicroelectronics |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | SICFET N-CH 1200V 12A HIP247 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SCT10N120 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 09 - Nov 13 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SCT10N120 |
Brand: | STMicroelectronics |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | STMicroelectronics |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 690mOhm @ 6A, 20V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22 nC @ 20 V |
Vgs (Max): | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 290 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | HiP247™ |
Package / Case: | TO-247-3 |
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In Stock | 6929 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $12.85000 | $12.85 |
10 | $11.88900 | $118.89 |
100 | $10.19260 | $1019.26 |
600 | $9.17490 | $5504.94 |
1200 | $8.49642 | $10195.704 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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