GPA030A135MN-FDR

GPA030A135MN-FDR
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Part Number GPA030A135MN-FDR
Manufacturer SemiQ
Category Discrete SemiconductorTransistors - IGBTs - Single
Description IGBT 1350V 60A 329W TO3PN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GPA030A135MN-FDR PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GPA030A135MN-FDR Specifications

Part Number:GPA030A135MN-FDR
Brand:SemiQ
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:SemiQ
Product Status:Obsolete
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1350 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):90 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
Power - Max:329 W
Switching Energy:4.4mJ (on), 1.18mJ (off)
Input Type:Standard
Gate Charge:300 nC
Td (on/off) @ 25°C:30ns/145ns
Test Condition:600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr):450 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3PN

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In Stock 33455 pieces - More on Order
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Pricing (USD)

Qty. Unit Price Ext. Price
2500$2.39400$5985

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