GP2T080A120U

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Part Number	GP2T080A120U
Manufacturer	SemiQ
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SIC MOSFET 1200V 80M TO-247-3L
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	GP2T080A120U PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 30 - Dec 04 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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GP2T080A120U Specifications

Part Number:	GP2T080A120U
Brand:	SemiQ
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	SemiQ
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:	58 nC @ 20 V
Vgs (Max):	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1377 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	188W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

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