For Reference Only
Part Number | SCT3120ALGC11 |
Manufacturer | Rohm Semiconductor |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | SICFET N-CH 650V 21A TO247N |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SCT3120ALGC11 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 06 - Nov 10 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SCT3120ALGC11 |
Brand: | Rohm Semiconductor |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Rohm Semiconductor |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 156mOhm @ 6.7A, 18V |
Vgs(th) (Max) @ Id: | 5.6V @ 3.33mA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 18 V |
Vgs (Max): | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 460 pF @ 500 V |
FET Feature: | - |
Power Dissipation (Max): | 103W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247N |
Package / Case: | TO-247-3 |
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In Stock | 11955 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $7.26000 | $7.26 |
10 | $6.55800 | $65.58 |
30 | $6.25267 | $187.5801 |
120 | $5.42900 | $651.48 |
270 | $5.18500 | $1399.95 |
510 | $4.72751 | $2411.0301 |
1020 | $4.27000 | $4355.4 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.