For Reference Only
| Part Number | SCT3080ALGC11 |
| Manufacturer | Rohm Semiconductor |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | SICFET N-CH 650V 30A TO247N |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SCT3080ALGC11 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 07 - Dec 11 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SCT3080ALGC11 |
| Brand: | Rohm Semiconductor |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Rohm Semiconductor |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Rds On (Max) @ Id, Vgs: | 104mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id: | 5.6V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 48 nC @ 18 V |
| Vgs (Max): | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 571 pF @ 500 V |
| FET Feature: | - |
| Power Dissipation (Max): | 134W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247N |
| Package / Case: | TO-247-3 |
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| In Stock | 9105 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $9.88000 | $9.88 |
| 10 | $8.92300 | $89.23 |
| 25 | $8.50760 | $212.69 |
| 100 | $7.38700 | $738.7 |
| 450 | $7.05500 | $3174.75 |
| 900 | $6.43250 | $5789.25 |
| 1350 | $5.81000 | $7843.5 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
