For Reference Only
| Part Number | SCT2H12NYTB |
| Manufacturer | Rohm Semiconductor |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | SICFET N-CH 1700V 4A TO268 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SCT2H12NYTB PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 06 - Nov 10 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SCT2H12NYTB |
| Brand: | Rohm Semiconductor |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Rohm Semiconductor |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1700 V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 1.1A, 18V |
| Vgs(th) (Max) @ Id: | 4V @ 410µA |
| Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 18 V |
| Vgs (Max): | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds: | 184 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 44W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-268 |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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| In Stock | 14590 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 400 | $3.68150 | $1472.6 |
| 800 | $3.30340 | $2642.72 |
| 1200 | $2.78600 | $3343.2 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
