RS1E200GNTB

RS1E200GNTB
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Part Number RS1E200GNTB
Manufacturer Rohm Semiconductor
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 20A 8HSOP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RS1E200GNTB PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 29 - Dec 03 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RS1E200GNTB Specifications

Part Number:RS1E200GNTB
Brand:Rohm Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rohm Semiconductor
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:16.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 25.1W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN

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In Stock 70058 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
2500$0.27115$677.875
5000$0.26180$1309

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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