RQ3E180BNTB

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Part Number	RQ3E180BNTB
Manufacturer	Rohm Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CHANNEL 30V 39A 8HSMT
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RQ3E180BNTB PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Oct 24 - Oct 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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RQ3E180BNTB Specifications

Part Number:	RQ3E180BNTB
Brand:	Rohm Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rohm Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	37 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3500 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 20W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-HSMT (3.2x3)
Package / Case:	8-PowerVDFN

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