RQ3E100BNTB

RQ3E100BNTB
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Part Number RQ3E100BNTB
Manufacturer Rohm Semiconductor
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 10A 8HSMT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RQ3E100BNTB PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RQ3E100BNTB Specifications

Part Number:RQ3E100BNTB
Brand:Rohm Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rohm Semiconductor
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN

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Quick Inquiry

In Stock 82132 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.10725$321.75
6000$0.10075$604.5
15000$0.09425$1413.75
30000$0.09100$2730

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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