For Reference Only
| Part Number | RGTH80TS65DGC11 |
| Manufacturer | Rohm Semiconductor |
| Category | Discrete Semiconductor › Transistors - IGBTs - Single |
| Description | IGBT 650V 70A 234W TO-247N |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RGTH80TS65DGC11 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 11 - Dec 15 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | RGTH80TS65DGC11 |
| Brand: | Rohm Semiconductor |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Rohm Semiconductor |
| Product Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 70 A |
| Current - Collector Pulsed (Icm): | 160 A |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 40A |
| Power - Max: | 234 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 79 nC |
| Td (on/off) @ 25°C: | 34ns/120ns |
| Test Condition: | 400V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | 58 ns |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247N |
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| In Stock | 42032 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $3.66000 | $3.66 |
| 10 | $3.28400 | $32.84 |
| 30 | $3.10500 | $93.15 |
| 120 | $2.69100 | $322.92 |
| 270 | $2.55300 | $689.31 |
| 510 | $2.29080 | $1168.308 |
| 1020 | $1.93200 | $1970.64 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.