For Reference Only
| Part Number | RGTH50TS65DGC11 |
| Manufacturer | Rohm Semiconductor |
| Category | Discrete Semiconductor › Transistors - IGBTs - Single |
| Description | IGBT 650V 50A 174W TO-247N |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RGTH50TS65DGC11 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Sep 22 - Sep 26 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | RGTH50TS65DGC11 |
| Brand: | Rohm Semiconductor |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Rohm Semiconductor |
| Product Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 50 A |
| Current - Collector Pulsed (Icm): | 100 A |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 25A |
| Power - Max: | 174 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 49 nC |
| Td (on/off) @ 25°C: | 27ns/94ns |
| Test Condition: | 400V, 25A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | 58 ns |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247N |
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| In Stock | 22448 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $3.15000 | $3.15 |
| 10 | $2.83200 | $28.32 |
| 30 | $2.67767 | $80.3301 |
| 120 | $2.32050 | $278.46 |
| 270 | $2.20152 | $594.4104 |
| 510 | $1.97539 | $1007.4489 |
| 1020 | $1.66600 | $1699.32 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
