RGT8NS65DGC9

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Part Number	RGT8NS65DGC9
Manufacturer	Rohm Semiconductor
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RGT8NS65DGC9 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

RGT8NS65DGC9 Specifications

Part Number:	RGT8NS65DGC9
Brand:	Rohm Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Rohm Semiconductor
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	8 A
Current - Collector Pulsed (Icm):	12 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 4A
Power - Max:	65 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	13.5 nC
Td (on/off) @ 25°C:	17ns/69ns
Test Condition:	400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr):	40 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262

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