R6509ENXC7G

R6509ENXC7G
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Part Number R6509ENXC7G
Manufacturer Rohm Semiconductor
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description 650V 9A TO-220FM, LOW-NOISE POWE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models R6509ENXC7G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

R6509ENXC7G Specifications

Part Number:R6509ENXC7G
Brand:Rohm Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rohm Semiconductor
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:585mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack

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In Stock 33539 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.92000$2.92

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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