BSM180D12P2E002

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Part Number	BSM180D12P2E002
Manufacturer	Rohm Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	1200V, 204A, HALF BRIDGE, SILICO
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSM180D12P2E002 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 09 - Nov 13 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BSM180D12P2E002 Specifications

Part Number:	BSM180D12P2E002
Brand:	Rohm Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Rohm Semiconductor
Product Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	204A (Tc)
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Input Capacitance (Ciss) (Max) @ Vds:	18000pF @ 10V
Power - Max:	1360W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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