For Reference Only
Part Number | BSM180D12P2C101 |
Manufacturer | Rohm Semiconductor |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 1200V 180A MODULE |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | BSM180D12P2C101 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 27 - Dec 31 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | BSM180D12P2C101 |
Brand: | Rohm Semiconductor |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | Rohm Semiconductor |
Product Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 204A (Tc) |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 23000pF @ 10V |
Power - Max: | 1130W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | - |
Package / Case: | Module |
Supplier Device Package: | Module |
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In Stock | 169 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $410.07000 | $410.07 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.