BSM180C12P2E202

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Part Number	BSM180C12P2E202
Manufacturer	Rohm Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 1200V 204A MODULE
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSM180C12P2E202 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BSM180C12P2E202 Specifications

Part Number:	BSM180C12P2E202
Brand:	Rohm Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rohm Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:	20000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1360W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	Module
Package / Case:	Module

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