FGB40N60SM

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Part Number	FGB40N60SM
Manufacturer	Linear Technology
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	INSULATED GATE BIPOLAR TRANSISTO
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FGB40N60SM PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FGB40N60SM Specifications

Part Number:	FGB40N60SM
Brand:	Linear Technology
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Linear Technology
Product Status:	Active
IGBT Type:	Field Stop
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	80 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 40A
Power - Max:	349 W
Switching Energy:	870µJ (on), 260µJ (off)
Input Type:	Standard
Gate Charge:	119 nC
Td (on/off) @ 25°C:	12ns/92ns
Test Condition:	400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK (TO-263)

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