FDR836P

Enlarge

For Reference Only

Part Number	FDR836P
Manufacturer	Linear Technology
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	P-CHANNEL MOSFET
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FDR836P PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 18 - Sep 22 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

FDR836P Specifications

Part Number:	FDR836P
Brand:	Linear Technology
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Linear Technology
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	30mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	44 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	2200 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SuperSOT™-8
Package / Case:	8-LSOP (0.130", 3.30mm Width)

TK12A50W,S5X	PB-F POWER MOSFET TRANSISTOR TO-	47849 More on Order
ISZ034N06LM5ATMA1	TRENCH 40<-<100V PG-TSDSON-8	38318 More on Order
NP35N04YLG-E1-AY	ABU / MOSFET	55276 More on Order
IMBG65R107M1HXTMA1	SILICON CARBIDE MOSFET PG-TO263-	9855 More on Order
SSM6K208FE,LF	MOSFET N-CH 30V 1.9A ES6	61377 More on Order
MKE38RK600DFEL-TUB	MOSFET N-CH 600V 50A SMPD	4082 More on Order
CMS16N06D-HF	MOSFET N-CH 60V 4.4A/16A DPAK	76471 More on Order
IXFR150N15	MOSFET N-CH 150V 105A ISOPLUS247	36398 More on Order
STD5NK52ZD-1	MOSFET N-CH 520V 4.4A I-PAK	99422 More on Order
IPP80N06S3L-06	MOSFET N-CH 55V 80A TO220-3	85016 More on Order
FDD6635	MOSFET N-CH 35V 15A/59A DPAK	82262 More on Order
IPB26CN10N	N-CHANNEL POWER MOSFET	34273 More on Order