FDN363N

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Part Number	FDN363N
Manufacturer	Linear Technology
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	N-CHANNEL POWER MOSFET
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FDN363N PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 01 - Dec 05 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FDN363N Specifications

Part Number:	FDN363N
Brand:	Linear Technology
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Linear Technology
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.2 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	200 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	500mW (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SuperSOT™-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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