RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2
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Part Number RJH1DF7RDPQ-80#T2
Manufacturer Renesas
Category Discrete SemiconductorTransistors - IGBTs - Single
Description RJH1DF7 - INSULATED GATE BIPOLAR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RJH1DF7RDPQ-80#T2 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 09 - Nov 13 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RJH1DF7RDPQ-80#T2 Specifications

Part Number:RJH1DF7RDPQ-80#T2
Brand:Renesas
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Renesas
Product Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1350 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):-
Vce(on) (Max) @ Vge, Ic:2.55V @ 15V, 35A
Power - Max:250 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:58ns/144ns
Test Condition:600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247

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In Stock 15515 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$5.16879$5.16879

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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