For Reference Only
Part Number | NP82N10PUF-E1-AY |
Manufacturer | Renesas |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | NP82N10PUF-E1-AY - MOS FIELD EFF |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | NP82N10PUF-E1-AY PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 15 - Nov 19 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | NP82N10PUF-E1-AY |
Brand: | Renesas |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Renesas |
Product Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5.8V, 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 41A, 10V |
Vgs(th) (Max) @ Id: | 3.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 96 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4350 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta), 150W (Tc) |
Operating Temperature: | 175°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263-3 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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In Stock | 43773 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $2.29838 | $2.29838 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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