NE856M02-T1-AZ

NE856M02-T1-AZ
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Part Number NE856M02-T1-AZ
Manufacturer Renesas
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description SAME AS 2SC5336 NPN SILICON AMPL
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NE856M02-T1-AZ PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 20 - Sep 24 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NE856M02-T1-AZ Specifications

Part Number:NE856M02-T1-AZ
Brand:Renesas
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:Renesas
Product Status:Last Time Buy
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6.5GHz
Noise Figure (dB Typ @ f):1.8dB @ 1GHz
Gain:12dB
Power - Max:1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89

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Quick Inquiry

In Stock 34265 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.80000$2.8

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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