UPA2813T1L-E2-AT

UPA2813T1L-E2-AT
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Part Number UPA2813T1L-E2-AT
Manufacturer Renesas Electronics America Inc
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 27A 8HWSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models UPA2813T1L-E2-AT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

UPA2813T1L-E2-AT Specifications

Part Number:UPA2813T1L-E2-AT
Brand:Renesas Electronics America Inc
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Product Status:Last Time Buy
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3130 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HWSON (3.3x3.3)
Package / Case:8-PowerVDFN

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In Stock 52572 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

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