For Reference Only
Part Number | NP80N055PDG-E1B-AY |
Manufacturer | Renesas Electronics America Inc |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 55V 80A TO263 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | NP80N055PDG-E1B-AY PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 10 - Nov 14 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | NP80N055PDG-E1B-AY |
Brand: | Renesas Electronics America Inc |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Renesas Electronics America Inc |
Product Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 6.6mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 135 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 6900 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta), 115W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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In Stock | 57224 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $1.73000 | $1.73 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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