NP80N055PDG-E1B-AY

NP80N055PDG-E1B-AY
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Part Number NP80N055PDG-E1B-AY
Manufacturer Renesas Electronics America Inc
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 80A TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NP80N055PDG-E1B-AY PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NP80N055PDG-E1B-AY Specifications

Part Number:NP80N055PDG-E1B-AY
Brand:Renesas Electronics America Inc
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:6.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 115W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 57224 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.73000$1.73

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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