HSG1002VE-TL-E

HSG1002VE-TL-E
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Part Number HSG1002VE-TL-E
Manufacturer Renesas Electronics America Inc
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description RF 0.035A C BAND GERMANIUM NPN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HSG1002VE-TL-E PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HSG1002VE-TL-E Specifications

Part Number:HSG1002VE-TL-E
Brand:Renesas Electronics America Inc
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:Renesas Electronics America Inc
Product Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):3.5V
Frequency - Transition:38GHz
Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:8dB ~ 19.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
Current - Collector (Ic) (Max):35mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-MFPAK

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Quick Inquiry

In Stock 91134 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.39000$0.39

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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