GA1L4M-T2-A

GA1L4M-T2-A
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Part Number GA1L4M-T2-A
Manufacturer Renesas Electronics America Inc
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GA1L4M-T2-A PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GA1L4M-T2-A Specifications

Part Number:GA1L4M-T2-A
Brand:Renesas Electronics America Inc
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Renesas Electronics America Inc
Product Status:Obsolete
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:95 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:200mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70

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In Stock 48485 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.10000$0.1

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