RMD1N25ES9

RMD1N25ES9
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Part Number RMD1N25ES9
Manufacturer Rectron USA
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 25V 1.1A SOT363
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RMD1N25ES9 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RMD1N25ES9 Specifications

Part Number:RMD1N25ES9
Brand:Rectron USA
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rectron USA
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 10 V
FET Feature:-
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363

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Quick Inquiry

In Stock 45320 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.06000$0.06

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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