RM6N800IP

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Part Number	RM6N800IP
Manufacturer	Rectron USA
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CHANNEL 800V 6A TO251
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RM6N800IP PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

RM6N800IP Specifications

Part Number:	RM6N800IP
Brand:	Rectron USA
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rectron USA
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1290 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	98W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Stub Leads, IPak

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