RM4P20ES6

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Part Number	RM4P20ES6
Manufacturer	Rectron USA
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 20V 3A/4.1A SOT23-6
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RM4P20ES6 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

RM4P20ES6 Specifications

Part Number:	RM4P20ES6
Brand:	Rectron USA
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rectron USA
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	52mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	740 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	1.7W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-6
Package / Case:	SOT-23-6

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