RM4N650IP

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Part Number	RM4N650IP
Manufacturer	Rectron USA
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CHANNEL 650V 4A TO251
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RM4N650IP PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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RM4N650IP Specifications

Part Number:	RM4N650IP
Brand:	Rectron USA
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rectron USA
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	280 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	46W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Stub Leads, IPak

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