RM35N30DN

RM35N30DN
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Part Number RM35N30DN
Manufacturer Rectron USA
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 30V 35A 8DFN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RM35N30DN PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 18 - Sep 22 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RM35N30DN Specifications

Part Number:RM35N30DN
Brand:Rectron USA
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rectron USA
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1265 pF @ 15 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN-EP (3x3)
Package / Case:8-PowerVDFN

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In Stock 50023 pieces - More on Order
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