P3M12080G7

P3M12080G7
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Part Number P3M12080G7
Manufacturer PN Junction Semiconductor
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 1200V 32A TO-263-7
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models P3M12080G7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

P3M12080G7 Specifications

Part Number:P3M12080G7
Brand:PN Junction Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:PN Junction Semiconductor
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:32A
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:96mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:2.2V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):136W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 9051 pieces - More on Order
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Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$11.90000$11.9

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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