PJP60R190E_T0_00001

PJP60R190E_T0_00001
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Part Number PJP60R190E_T0_00001
Manufacturer Panjit International Inc.
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description 600V N-CHANNEL SUPER JUNCTION MO
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PJP60R190E_T0_00001 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 29 - Dec 03 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PJP60R190E_T0_00001 Specifications

Part Number:PJP60R190E_T0_00001
Brand:Panjit International Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Panjit International Inc.
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:196mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1421 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 231W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3

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Quick Inquiry

In Stock 27252 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$3.14000$3.14

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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